The reasons and solutions for MOS transistor breakdown are as follows
Categories：Product knowledge Date：2024-11-16 Hits：395 View »
The reasons and solutions for MOS transistor breakdown are as follows
Categories：Product knowledge Date：2024-11-16 Hits：418 View »
In actual projects, we mostly use enhanced models.
Categories：Product knowledge Date：2024-11-16 Hits：365 View »
The working principle of tunneling field-effect transistor (TFET) is interband tunneling, and its S can break through the limit of 60mV/decade. Moreover, the Ioff of TFET is very low, so the operating voltage of TFET can be further reduced.
Categories：Product knowledge Date：2024-11-16 Hits：484 View »
1. Identify pin polarity; 2. Check the quality of performance
Categories：Product knowledge Date：2024-11-16 Hits：394 View »
For unipolar TVS and bipolar TVS
Categories：Product knowledge Date：2024-11-15 Hits：356 View »
When the thyristor is damaged and needs to be inspected and analyzed for its cause, the core can be removed from the cooling jacket, the core box can be opened, and the chip can be removed to observe the traces after the damage to determine the cause. Below are several common phenomenon analyses.
Categories：Product knowledge Date：2024-11-15 Hits：454 View »
Silicon controlled rectifier (SCR) is the abbreviation for silicon controlled rectifier.
Categories：Product knowledge Date：2024-11-15 Hits：423 View »
One hot air gun, one anti-static soldering iron, one mobile phone board, one pair of tweezers, an appropriate amount of low melting point solder wire, rosin flux (flux), solder suction wire, and a suitable amount of board washing water.
Categories：Product knowledge Date：2024-11-15 Hits：347 View »
Introduce a thyristor sound source switching circuit that does not use integrated circuits, does not occupy relay contacts, has simple wiring, and is easy to expand.
Categories：Product knowledge Date：2024-11-15 Hits：358 View »
