Active and passive components
Categories：Product knowledge Date：2024-11-16 Hits：420 View »
The main reason is that the semiconductor types of each pole are different. The E, B, and C poles of PNP transistors are P-type, N-type, and P-type semiconductors, respectively, while NPN transistors are exactly the opposite.
Categories：Product knowledge Date：2024-11-16 Hits：524 View »
The reasons and solutions for MOS transistor breakdown are as follows
Categories：Product knowledge Date：2024-11-16 Hits：460 View »
The reasons and solutions for MOS transistor breakdown are as follows
Categories：Product knowledge Date：2024-11-16 Hits：498 View »
In actual projects, we mostly use enhanced models.
Categories：Product knowledge Date：2024-11-16 Hits：422 View »
The working principle of tunneling field-effect transistor (TFET) is interband tunneling, and its S can break through the limit of 60mV/decade. Moreover, the Ioff of TFET is very low, so the operating voltage of TFET can be further reduced.
Categories：Product knowledge Date：2024-11-16 Hits：539 View »
1. Identify pin polarity; 2. Check the quality of performance
Categories：Product knowledge Date：2024-11-16 Hits：452 View »
For unipolar TVS and bipolar TVS
Categories：Product knowledge Date：2024-11-15 Hits：400 View »
When the thyristor is damaged and needs to be inspected and analyzed for its cause, the core can be removed from the cooling jacket, the core box can be opened, and the chip can be removed to observe the traces after the damage to determine the cause. Below are several common phenomenon analyses.
Categories：Product knowledge Date：2024-11-15 Hits：511 View »
Silicon controlled rectifier (SCR) is the abbreviation for silicon controlled rectifier.
Categories：Product knowledge Date：2024-11-15 Hits：489 View »
